TSM120N06LCR RLG Tech Spezifikatioune
Taiwan Semiconductor Corporation - TSM120N06LCR RLG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - TSM120N06LCR RLG
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Taiwan Semiconductor | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-PDFN (5x6) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 10V | |
Power Dissipation (Max) | 69W (Tc) | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2116 pF @ 30 V | |
Gate Charge (Qg) (Max) @ Vgs | 36.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 54A (Tc) | |
Basis Produktnummer | TSM120 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation TSM120N06LCR RLG.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | TSM120N06LCR RLG | TSM120N06LCP | TSM120N06LCS | TSM126CX RFG |
Hiersteller | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation |
Input Capacitance (Ciss) (Max) @ Vds | 2116 pF @ 30 V | 2118 pF @ 30 V | 2193 pF @ 30 V | 51.42 pF @ 25 V |
Package / Case | 8-PowerTDFN | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8-SOIC (0.154", 3.90mm Width) | TO-236-3, SC-59, SOT-23-3 |
FET Feature | - | - | - | Depletion Mode |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Serie | - | - | - | - |
Supplier Device Package | 8-PDFN (5x6) | TO-252, (D-Pak) | 8-SOP | SOT-23 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 0V, 10V |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 60 V | 600 V |
Basis Produktnummer | TSM120 | TSM120 | TSM120 | TSM126 |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 1V @ 8µA |
Gate Charge (Qg) (Max) @ Vgs | 36.5 nC @ 10 V | 37 nC @ 10 V | 37 nC @ 10 V | 1.18 nC @ 4.5 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 54A (Tc) | 10A (Ta), 70A (Tc) | 10A (Ta), 23A (Tc) | 30mA (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 10V | 12mOhm @ 10A, 10V | 12mOhm @ 10A, 10V | 800Ohm @ 16mA, 10V |
Power Dissipation (Max) | 69W (Tc) | 2.6W (Ta), 125W (Tc) | 2.2W (Ta), 12.5W (Tc) | 500mW (Ta) |
Eroflueden TSM120N06LCR RLG PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir TSM120N06LCR RLG - Taiwan Semiconductor Corporation.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
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Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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